View APT32F120J_1211631.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

APT32F120J
1200V, 32A, 0.35 Max, trr 430ns
N-Channel FREDFET
Power MOS 8TM is a high speed, high voltage N-channel switch-mode power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly reduced ratio of Crss/Ciss result in excellent niose immunity and low switching loss. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control di/dt during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency.
S G D
S
SO
2 T-
27
ISOTOP (R)
"UL Recognized"
file # E145592
APT32F120J
G
D
Single die FREDFET
S
FEATURES
* Fast switching with low EMI * Low trr for high reliability * Ultra low Crss for improved noise immunity * Low gate charge * Avalanche energy rated * RoHS compliant
TYPICAL APPLICATIONS
* ZVS phase shifted and other full full bridge * Half bridge * PFC and other boost converter * Buck converter * Single and two switch forward * Flyback
Absolute Maximum Ratings
Symbol ID IDM VGS EAS IAR Parameter Continuous Drain Current @ TC = 25C Continuous Drain Current @ TC = 100C Pulsed Drain Current Gate-Source Voltage Single Pulse Avalanche Energy 2 Avalanche Current, Repetitive or Non-Repetitive
1
Ratings 32 20 195 30 2700 25
Unit
A
V mJ A
Thermal and Mechanical Characteristics
Symbol PD RJC RCS TJ,TSTG VIsolation WT Characteristic Total Power Dissipation @ TC = 25C Junction to Case Thermal Resistance Case to Sink Thermal Resistance, Flat, Greased Surface Operating and Storage Junction Temperature Range RMS Voltage (50-60hHz Sinusoidal Wavefomr from Terminals to Mounting Base for 1 Min.) Package Weight -55 2500 1.03 29.2 10 1.1 0.11 150 Min Typ Max 960 0.13 Unit W C/W C V oz g in*lbf N*m
10-2006 050-8090 Rev A
Torque
Terminals and Mounting Screws. Microsemi Website - http://www.microsemi.com
Static Characteristics
Symbol
VBR(DSS) VBR(DSS)/TJ RDS(on) VGS(th) VGS(th)/TJ IDSS IGSS
TJ = 25C unless otherwise specified
Test Conditions
VGS = 0V, ID = 250A Reference to 25C, ID = 250A VGS = 10V, ID = 25A VGS = VDS, ID = 2.5mA VDS = 1200V VGS = 0V TJ = 25C TJ = 125C
APT32F120J
Typ 1.41 Max Unit V V/C V mV/C A nA
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain-Source On Resistance
3
Min 1200
Gate-Source Threshold Voltage Threshold Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Source Leakage Current
3
0.30 4 -10
0.35 5 250 1000 100
VGS = 30V
Dynamic Characteristics
Symbol
gfs Ciss Crss Coss Co(cr) Co(er) Qg Qgs Qgd td(on) tr td(off) tf
4
TJ = 25C unless otherwise specified
Test Conditions
VDS = 50V, ID = 25A VGS = 0V, VDS = 25V f = 1MHz
Parameter
Forward Transconductance Input Capacitance Reverse Transfer Capacitance Output Capacitance Effective Output Capacitance, Charge Related
Min
Typ 58 18200 215 1340 520
Max
Unit S
pF
5
VGS = 0V, VDS = 0V to 800V
Effective Output Capacitance, Energy Related Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time
VGS = 0 to 10V, ID = 25A, VDS = 600V Resistive Switching VDD = 800V, ID = 25A RG = 2.2 6 , VGG = 15V
270 560 90 265 100 60 315 90
nC
ns
Source-Drain Diode Characteristics
Symbol
IS ISM VSD trr Qrr Irrm dv/dt
Parameter
Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) 1 Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Peak Recovery dv/dt
Test Conditions
MOSFET symbol showing the integral reverse p-n junction diode (body diode)
Min
D
Typ
Max 32
Unit A
G S
TJ = 25C TJ = 125C
195 1.1 430 960 31 75 17 23 25 V ns C A V/ns
ISD = 25A, TJ = 25C, VGS = 0V
ISD = 25A 3 diSD/dt = 100A/s
TJ = 25C TJ = 125C TJ = 25C TJ = 125C
ISD 25A, di/dt 1000A/s, VDD = 100V, TJ = 125C
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Starting at TJ = 25C, L = 8.64mH, RG = 2.2, IAS = 25A. 3 Pulse test: Pulse Width < 380s, duty cycle < 2%.
10-2006 Rev A
4 Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS. 5 Co(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(er) for any value of VDS less than V(BR)DSS, use this equation: Co(er) = -8.27E-7/VDS^2 + 1.01E-7/VDS + 1.43E-10. 6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452)
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
050-8090
140 120 ID, DRAIN CURRENT (A) 100
V
GS
= 10V
45 40 ID, DRIAN CURRENT (A) 35 30 25 20 15 10 5 0 0
APT32F120J
T = 125C
J
V
GS
= 6, 7, 8 & 9V
TJ = -55C
80 60 40 20 0
TJ = 125C
5V
TJ = 25C
4.5V
TJ = 150C
30 25 20 15 10 5 0 VDS(ON), DRAIN-TO-SOURCE VOLTAGE (V) Figure 1, Output Characteristics
NORMALIZED TO VGS = 10V @ 25A
30 25 20 15 10 5 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 2, Output Characteristics
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
3.0 2.5 2.0 1.5 1.0 0.5
160 140 ID, DRAIN CURRENT (A) 120 100 80 60 40 20 0 0
VDS> ID(ON) x RDS(ON) MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE
TJ = -55C TJ = 25C TJ = 125C
0 25 50 75 100 125 150 0 -55 -25 TJ, JUNCTION TEMPERATURE (C) Figure 3, RDS(ON) vs Junction Temperature 70 60
TJ = -55C TJ = 25C TJ = 125C
8 7 6 5 4 3 2 1 VGS, GATE-TO-SOURCE VOLTAGE (V) Figure 4, Transfer Characteristics
30,000 10,000 C, CAPACITANCE (pF)
Ciss
gfs, TRANSCONDUCTANCE
50 40 30 20 10 0 0
1000
Coss
100
Crss
25 20 15 10 ID, DRAIN CURRENT (A) Figure 5, Gain vs Drain Current 5
ID = 25A
30
800 1000 1200 600 400 200 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 6, Capacitance vs Drain-to-Source Voltage 0 200 ISD, REVERSE DRAIN CURRENT (A) 180 160 140 120 100 80 60 40 20 0 0
TJ = 25C
10
16 VGS, GATE-TO-SOURCE VOLTAGE (V) 14 12 10 8 6 4 2
VDS = 240V
VDS = 600V
VDS = 960V
TJ = 150C
050-8090
100 200 300 400 500 600 700 800 Qg, TOTAL GATE CHARGE (nC) Figure 7, Gate Charge vs Gate-to-Source Voltage 0
0
1.5 1.2 0.9 0.6 0.3 VSD, SOURCE-TO-DRAIN VOLTAGE (V) Figure 8, Reverse Drain Current vs Source-to-Drain Voltage
Rev A
10-2006
250 100 ID, DRAIN CURRENT (A)
I
250 100 ID, DRAIN CURRENT (A)
IDM
APT32F120J
DM
10
13s
100s
1ms
10
13s
100s
1ms
Rds(on)
1
Rds(on)
10ms
100ms
1
TJ = 150C TC = 25C
10ms 100ms
DC line
0.1
TJ = 125C TC = 75C
DC line
1
1200 100 10 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 9, Forward Safe Operating Area
0.1
Scaling for Different Case & Junction Temperatures: ID = ID(T = 25C)*(TJ - TC)/125
C
1200 100 10 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 10, Maximum Forward Safe Operating Area 1
TJ (C)
0.0271 Dissipated Power (Watts) 0.850 0.850
TC (C)
0.102 ZEXT are the external thermal impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction.
Figure 11, Transient Thermal Impedance Model 0.14 ZJC, THERMAL IMPEDANCE (C/W) 0.12 0.10 0.08
0.5 D = 0.9
0.7
0.06 0.04 0.02 0
0.3
ZEXT
Note:
PDM
t1 t2
0.1 0.05
SINGLE PULSE
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t1 = Pulse Duration
t
10-5
10-1 10-2 10-3 RECTANGULAR PULSE DURATION (seconds) Figure 12. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration 10-4
1.0
SOT-227 (ISOTOP(R)) Package Outline
31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322)
W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places)
r = 4.0 (.157) (2 places)
4.0 (.157) 4.2 (.165) (2 places)
25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504)
10-2006
3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594)
1.95 (.077) 2.14 (.084)
* Source
Drain
* Emitter terminals are shorted internally. Current handling capability is equal for either Source terminal.
30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504)
Rev A
* Source Dimensions in Millimeters and (Inches)
Gate
050-8090
ISOTOP(R) is a registered trademark of ST Microelectronics NV. Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.

▲Up To Search▲

Price & Availability of APT32F120J

	To Download APT32F120J Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .